Certification: | RoHS |
---|---|
Encapsulation Structure: | Chip Transistor |
Installation: | SMD Triode |
Power Level: | Medium Power |
Structure: | Mosfet |
Material: | Silicon |
Customization: |
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Suppliers with verified business licenses
TYPE
|
DESCRIPTION
|
---|---|
Category
|
Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
|
Series
|
HEXFET®
|
Package
|
Tube
|
FET Type
|
N-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
500 V
|
Current - Continuous Drain (Id) @ 25°C
|
8A (Tc)
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
Rds On (Max) @ Id, Vgs
|
850mOhm @ 4.8A, 10V
|
Vgs(th) (Max) @ Id
|
4V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs
|
63 nC @ 10 V
|
Vgs (Max)
|
±20V
|
Input Capacitance (Ciss) (Max) @ Vds
|
1300 pF @ 25 V
|
Power Dissipation (Max)
|
125W (Tc)
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
Mounting Type
|
Through Hole
|
Supplier Device Package
|
TO-220AB
|
Package / Case
|
TO-220-3
|
Suppliers with verified business licenses